'Universal memory' breakthrough brings the next generation of …
Feb 9, 2024 · Universal computer memory that's both super-fast and energy efficient is one step closer to reality after scientists built an "extremely" stable prototype using a completely new material.
Spin-transfer torque magnetoresistive random access memory
Nov 6, 2024 · Spin-transfer torque magnetoresistive random access memory (STT-MRAM) is a non-volatile memory technology with a unique combination of speed, endurance, density and ease of fabrication, which has ...
TSMC tandem builds exotic new MRAM-based memory with …
Jan 19, 2024 · TSMC and Taiwan's Industrial Technology Research Institute (ITRI) on Thursday announced that they had jointly developed co-developed a spin-orbit-torque magnetic random-access memory (SOT-MRAM)...
Ultrafast laser-powered 'magnetic RAM' is on the horizon after …
Apr 17, 2024 · Scientists have discovered a new mechanism in which a concentrated laser beam can change the magnetic state of a solid material. The finding could one day be harnessed in ultrafast computing...
Phase-shifting computer memory could herald the next
Nov 14, 2017 · That's because materials scientists in China have recently found a way to speed up—by more than a factor of 10—so-called phase-change random access memory (PCRAM), which can hold onto information even when your computer's power is off.
Breakthrough CRAM technology ditches von Neumann model ... - TechSpot
Jul 28, 2024 · The researchers have designed a new "computational random-access memory" (CRAM) prototype chip that could reduce energy needs for AI applications by a mind-boggling 1,000 times or more...
Random Access Memory - latest research news and features - Phys.org
Magnetoresistive random access memory (MRAM) is the top candidate for next-generation digital technology. However, manipulating MRAM efficiently and effectively is challenging.
Magnetic random-access memory with disturb-free read - Nature
Dec 8, 2023 · Magnetic random-access memory based on magnetic tunnel junctions and spin-transfer torque (STT-MRAM) could be an alternative to other embedded memory technology, such as eFlash, for logic...
MRAM makes its mark - Nature Electronics
Dec 2, 2022 · A compact and energy-efficient magnetoresistive random-access memory (MRAM) technology could help lower the power consumption of data storage and management.
New material opens the door for energy-efficient computing
May 5, 2023 · This method of memory storage, known as spin orbit torque magnetoresistive random access memory or SOT-MRAM, has the potential to store data more quickly and efficiently than current methods, which store data using electric charge and require a continuous power input to maintain that data.